ProV Logo
0

Topological insulator Bi2Se3 thin films ...
Song, Can-Li...
Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy by Song, Can-Li ( Author )
N.A
06-07-2010
Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0\pm 0.2x1011/cm2, and become a bulk insulator at a thickness of 10 quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.
-
Article
pdf
36.88 KB
English
-
MYR 0.00
-
https://arxiv.org/abs/1007.0809
Share this eBook